I-ZnGeP2-I-Saturated Infrared Nonlinear Optics
Ingcaciso yeMveliso
Ngenxa yezi zakhiwo ezizodwa, iyaziwa njengenye yezona zinto zithembisayo kwizicelo ezingabonakaliyo ezingabonakaliyo.I-ZnGeP2 inokuvelisa i-3-5 μm yelaser eqhubekayo etyhunotywayo ibekwe ngeteknoloji yeparametric oscillation (OPO) yetekhnoloji.I-Lasers, esebenza kwifestile ye-atmospheric transmission ye-3-5 μm ibaluleke kakhulu kwizicelo ezininzi, ezifana ne-infrared counter measure, ukujonga iikhemikhali, izixhobo zonyango, kunye ne-remote sensor.
Singanikezela ngekhwalithi ephezulu ye-Optical ye-ZnGeP2 ene-coefficient yokufunxa ephantsi kakhulu α <0.05 cm-1 (kwimpompo yamaza obude obuyi-2.0-2.1 µm), engasetyenziselwa ukuvelisa i-laser e-mid-infrared esebenza ngokufanelekileyo nge-OPO okanye iinkqubo ze-OPA.
Isakhono sethu
ITekhnoloji yoMmandla woBubushushu obuDynamic yenziwa yaza yasetyenziswa ukudibanisa i-polycrystalline ye-ZnGeP2.Ngale teknoloji, ngaphezulu kwe-500g yococeko oluphezulu lwe-ZnGeP2 i-polycrystalline eneenkozo ezinkulu iye yadityaniswa ngexesha elinye.
Indlela ye-Horizontal Gradient Freeze edityaniswe ne-Directional Necking Technology (enokuthi ithobe ukuxinana kwe-dislocation ngokufanelekileyo) isetyenziswe ngempumelelo ekukhuleni komgangatho ophezulu we-ZnGeP2.
I-ZnGeP2 yomgangatho ophezulu wekhilogram enobukhulu behlabathi (Φ55 mm) ikhuliswe ngempumelelo yi-Vertical Gradient Freeze method.
Uburhabaxa nomphezulu wezixhobo zekristale, ngaphantsi kwe-5Å kunye ne-1/8λ ngokulandelanayo, zifunyenwe ngomgibe wethu wobugcisa bonyango.
Ukuphambuka kwe-angle yokugqibela yezixhobo ze-crystal zingaphantsi kwe-0.1 idigri ngenxa yokusetyenziswa kwe-orientation echanekileyo kunye neendlela zokusika ezichanekileyo.
Izixhobo ezinomsebenzi ogqwesileyo ziye zaphunyezwa ngenxa yomgangatho ophezulu weekristale kunye nomgangatho ophezulu we-crystal processing technology (I-3-5μm mid-infrared laser tunable ilaser iye yaveliswa ngokuguqulwa okusebenzayo okungaphezulu kwe-56% xa impontshwa ngokukhanya kwe-2μm. umthombo).
Iqela lethu lophando, ngokuhlola okuqhubekayo kunye nobugcisa obutsha, liye laphumelela ngempumelelo iteknoloji yokudibanisa ye-polycrystalline ephezulu ye-ZnGeP2, iteknoloji yokukhula yobukhulu obukhulu kunye nomgangatho ophezulu we-ZnGeP2 kunye ne-crystal orientation kunye ne-high-precision processing technology;inokubonelela ngezixhobo ze-ZnGeP2 kunye neekristale zangaphambili njengoko zikhulile kwisikali sobunzima kunye nokufana okuphezulu, i-coefficient ephantsi yokufunxa, ukuzinza okulungileyo, kunye nokusebenza kakuhle kokuguqulwa.Ngelo xesha, siye saseka isethi epheleleyo yeqonga lokuvavanya ukusebenza kwekristale esenza sibe nekhono lokubonelela ngeenkonzo zokuvavanya ukusebenza kwekristale kubathengi.
Usetyenziso
● Isizukulwana sesibini, sesithathu, kunye nesine se-harmonic ye-CO2-laser
● Ukuveliswa kweparametrikhi ebonakalayo ngokumpompa kumgama ongamaza we-2.0 µm
● Imveliso yesibini ye-harmonic ye-CO-laser
● Ukuvelisa ngemitha ehambelanayo kwi-submillimeterrange ukusuka kwi-70.0 µm ukuya kwi-1000 µm
● Ukuveliswa kweefrikhwensi ezidityanisiweyo ze-CO2- kunye ne-CO-laser radiation kunye nezinye iilaser zisebenza kummandla wecrystal transparency.
Iipropati ezisisiseko
| Ikhemikhali | ZnGeP2 |
| I-Crystal Symmetry kunye neKlasi | itetragonal, -42m |
| Iiparamitha zeLattice | a = 5.467 Å c = 12.736 Å |
| Ukuxinana | 4.162 g/cm3 |
| Mohs Ubunzima | 5.5 |
| Iklasi ye-Optical | Positive uniaxial |
| Uluhlu loThutho oluSebenzisayo | 2.0 um-10.0 um |
| I-Thermal Conductivity @ T= 293 K | 35 W/m∙K (⊥c) 36 W/m∙K ( ∥ c) |
| Ukwandiswa kweThermal @ T = 293 K ukuya ku-573 K | 17.5 x 106 K-1 (⊥c) 15.9 x 106 K-1 ( ∥ c) |
Iiparamitha zobuGcisa
| Ukunyamezela kwe-Diameter | +0/-0.1 mm |
| Ukunyamezela Ubude | ±0.1 mm |
| Orientation Unyamezelo | <30 arcmin |
| Umgangatho womphezulu | 20-10 SD |
| Ukucaba | <λ/4@632.8 nm |
| Ukufana | <30 arcsec |
| Perpendicularity | <5 arcmin |
| Chamfer | <0.1 mm x 45° |
| Uluhlu lokungafihli | 0.75 - 12.0 ?m |
| Ii-Coefficients ezingezizo | d36 = 68.9 pm/V (nge-10.6μm) d36 = 75.0 pm/V (ngo-9.6 μm) |
| Umda womonakalo | 60 MW/cm2 ,150ns@10.6μm |
