Er,YB:YAB-Er, Yb Co – Doped Phosphate Glass
Ingcaciso yeMveliso
(Er,Yb: iglasi yephosphate) idibanisa ubomi obude (~8 ms) benqanaba lelaser kwi-4 I 13/2 Er 3+ kunye nesezantsi (2-3 ms) ye-4 I 11/2 Er 3+ inqanaba Ubomi bonke, inokuvelisa i-resonance F 5/2 imeko echwayitileyo kunye neYb 3+ 2. Ukuphumla okukhawulezileyo kwe-multiphonon kwi-4 I 11/2 ukuya ku-4 I 13/2 ngenxa yokusebenzisana phakathi kweYb 3+ kunye ne-Er 3+ ion evuyayo kwi-2 F 5/2 kunye ne-4 I 11/2, ngokulandelanayo, eli nqanaba lamandla linciphisa kakhulu ugqithiso lwamandla omva kunye nelahleko yokuguqula.
Er 3+ , Yb 3+ co-doped yttrium aluminiyam ialuminiyamu borate (Er,Yb:YAB) iikristale zisetyenziswa ngokuqhelekileyo Er,Yb:iglasi ezizezinye zephosphate kwaye zinokusetyenziswa njengemithombo yeendaba esebenzayo “ekhusela iliso” (1,5 -1) , 6 μm) iilaser ezinamandla aphezulu okukhupha amandla kwi-CW kunye neendlela zepulsed. Ibonakaliswa ngumgangatho ophezulu we-thermal conductivity ye-7,7 Wm-1 K-1 kunye ne-6 Wm-1 K-1 kunye ne-axis kunye ne-c-axis, ngokulandelanayo. Ikwanokusebenza okuphezulu kwe-Yb 3+→Er 3+ ukuhanjiswa kwamandla (~94%) kunye nelahleko ebuthathaka yokuguqulwa okubangelwa kubomi obufutshane kakhulu (~80 ns) be-4 I 11/2 imeko echwayitileyo ngenxa yomninimzi Awona mandla aphezulu ephonon iphezulu (vmax ~1500 cm-1). Ibhendi yokufunxa eyomeleleyo nebanzi (malunga ne-17 nm) yabonwa kwi-976 nm, ehambelana ne-spectrum yokukhutshwa kwe-InGaAs laser diode.
Iipropati ezisisiseko
Icandelo leCrystal | (1×1)-(10×10)mm2 |
Ubungqingqwa bekristale | 0.5-5mm |
Ukunyamezela komgangatho | ±0.1mm |
Ukugqwetheka kwamaza | ≤λ /8@633nm |
Gqiba | 10/5 (MIL-PRF-13830B) |
Ukucaba | ≤λ /6@633nm |
Ukufana | ngcono kune 10 arc imizuzwana |